26/10/2016 - Power tests with 200A silicon-carbide (SiC) MOSFETS in DC/DC applications
The research group is testing silicon-carbide (SiC) power modules in half bridge topology with fast recovery diodes in antiparallel. The main electric characteristics of the modules are: 600V, 200A and a maximum switching frequency of 200kHz. It is expected to get a comparison with conventional silicon devices in order to determine the thermal advantages with respect to the classical solution. This technology has interesting potential applications in electric vehicles, aircrafts and particle accelerators.